MEBSS123-G

N - Channel 100-V (D-S) MOSFET MEBSS123/MEBSS123-G GENERAL DESCRIPTION The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON)≦6Ω@VGS=10V ● RDS(ON)≦10Ω@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter  Th Ordering Information: MEBSS123 (Pb-free)  MEBSS123-G (Green product-Halogen free)...