ME2N7002DA/ME2N7002DA-G
N - Channel 60V (D-S) MOSFET, ESD Protection
GENERAL DESCRIPTION
The ME2N7002DA is the N-Channe...
ME2N7002DA/ME2N7002DA-G
N - Channel 60V (D-S) MOSFET, ESD Protection
GENERAL DESCRIPTION
The ME2N7002DA is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-23) Top View
FEATURES
● RDS(ON) ≦4Ω@VGS=10V ● RDS(ON) ≦4Ω@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability ● Capable doing Cu wire bonding
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch
Th Ordering Information: ME2N7002DA (Pb-free) ...