N - Channel 60V (D-S) MOSFET
ME2N7002D2/ME2N7002D2-G
GENERAL DESCRIPTION
The ME2N7002D2 is the N-Channel logic enhance...
N - Channel 60V (D-S) MOSFET
ME2N7002D2/ME2N7002D2-G
GENERAL DESCRIPTION
The ME2N7002D2 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
(SOT-23) Top View
FEATURES
● RDS(ON)≦4.5Ω@VGS=10V ● RDS(ON)≦5.5Ω@VGS=4.5V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
Ordering Information: ME2N7002D2 (Pb-free) ME2N7002D2-G (Green product-Halogen free)
N-Channel MOSFET
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25℃ TA=70℃
Pulsed Drain Current
Maximum Power Dissipation
TA=25℃ TA=70℃
Operating Junction Temperature
T...