ME2N7002DW

N-Channel MOSFET – ESD Protected ME2N7002DW(Green) GENERAL DESCRIPTION The ME2N7002DW is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● ESD Rating 2KV HBM ● 3-pin SOT-323 package ● Pb-free plating ; RoHS compliant (green Product) Mechanical data ● High density cell design for low RDS(ON) ● Very low leakage current in off condition ● Advanced trench process technology ● High-speed switching. ● The soldering temperature and time shall not exceed 260°C for more than 10 seconds. PIN CONFIGURATION (SOT-323) Top View ME2N7...