ME2N7002F1KW/ME2N7002F1KW -G
Dual N-Channel 30V (D-S) MOSFET, ESD Protection
GENERAL DESCRIPTION
The ME2N7002F1KW is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
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