ME2N7002F1W/ME2N7002F1W -G
N-Channel 60V (D-S) MOSFET, ESD Protection
GENERAL DESCRIPTION
The ME2N7002F1W is the N-Chan...
ME2N7002F1W/ME2N7002F1W -G
N-Channel 60V (D-S) MOSFET, ESD Protection
GENERAL DESCRIPTION
The ME2N7002F1W is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦8Ω@VGS=4V
● RDS(ON)≦13Ω@VGS=2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
(SOT-323) Top View
Ordering Information:ME2N7002F1W (Pb-free) ME2N7002F1W-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25℃ TA=70℃
Pulsed Drain Current
Maximum Power Dissipation
TA=25℃ TA=70℃
Operating Junction and Stor...
