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MMDT4403

MCC

Dual PNP Transistors

MMDT4403 Features • Epitaxial Planar Die Construction • Ideal for Low Power Amplification and Switching • Halogen Free ...


MCC

MMDT4403

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MMDT4403 Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25°C Unless Otherwise Specified Operating Junction Temperature Range: -55℃ to +150℃ Storage Temperature Range: -55℃ to +150℃ Thermal Resistance: 625℃/W Junction to Ambient Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Symbol VCBO VCEO VEBO IC PD Rating -40 -40 -5 -600 200 Unit V V V mA mW Marking: K2T Internal Structure 6 5 4 1 2 3 Dual PNP Plastic-Encapsulate Transistors SOT-363 G 65 4 1 23 BC A H M K L J D DIMENSIONS DIM INCHES MIN MAX MM MIN MAX A 0.006 0.014 0.15 0.35 B 0.045 0.053 1.15 1.35 C 0.079 0.096 2.00 2.45 D 0.026 0.65 G 0.047 0.055 1.20 1.40 H 0.071 0.087 1.80 2.20 J ----- 0.004 ----- 0.10 K 0.031 0.043 0.80 1.10 L 0.010 0.018 0.26 0.46 M 0.003 0.006 0.08 0.15 NOTE TYP. Suggested Solder Pad Layout 0.65 (mm) 1.94 0.80 0.40 Rev.3-2-09082019 1/4 MCCSEMI.COM MMDT4403 Electrical Characteristics @ TA=25°C Unless Otherwise Specified Parameter Symbol Min Collector-Base Breakdown Voltage V(BR)CBO -40 Collector-Emitter Breakdown Voltage V(BR)CEO -40 Emitter-Base Breakdown Voltage ...




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