MMDT4403
Features
• Epitaxial Planar Die Construction • Ideal for Low Power Amplification and Switching • Halogen Free ...
MMDT4403
Features
Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings @ 25°C Unless Otherwise Specified
Operating Junction Temperature Range: -55℃ to +150℃ Storage Temperature Range: -55℃ to +150℃ Thermal Resistance: 625℃/W Junction to Ambient
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation
Symbol VCBO VCEO VEBO IC PD
Rating -40 -40 -5 -600 200
Unit V V V mA
mW
Marking: K2T Internal Structure
6
5
4
1
2
3
Dual
PNP Plastic-Encapsulate
Transistors
SOT-363
G 65 4
1 23
BC
A
H
M
K
L
J
D
DIMENSIONS
DIM
INCHES MIN MAX
MM MIN MAX
A 0.006 0.014 0.15 0.35
B 0.045 0.053 1.15 1.35
C 0.079 0.096 2.00 2.45
D
0.026
0.65
G 0.047 0.055 1.20 1.40
H 0.071 0.087 1.80 2.20
J ----- 0.004 ----- 0.10
K 0.031 0.043 0.80 1.10
L 0.010 0.018 0.26 0.46
M 0.003 0.006 0.08 0.15
NOTE TYP.
Suggested Solder Pad Layout
0.65
(mm)
1.94
0.80 0.40
Rev.3-2-09082019
1/4
MCCSEMI.COM
MMDT4403
Electrical Characteristics @ TA=25°C Unless Otherwise Specified
Parameter
Symbol Min
Collector-Base Breakdown Voltage
V(BR)CBO -40
Collector-Emitter Breakdown Voltage V(BR)CEO -40
Emitter-Base Breakdown Voltage
...