Elektronische Bauelemente
MMDT2227
NPN-PNP Silicon Multi-Chip Transistor
RoHS Compliant Product
* Features
SOT-363
...
Elektronische Bauelemente
MMDT2227
NPN-
PNP Silicon Multi-Chip
Transistor
RoHS Compliant Product
* Features
SOT-363
Power dissipation PCM : 0.2 W (Tamp.= 25 OC)
Collector current ICM : 0.2/-0.2 A
Collector-base voltage V(BR)CBO : 75/-60 V
Operating & Storage junction Temperature Tj, Tstg : -55OC~ +150OC
.055(1.40) .047(1.20)
.026TYP (0.65TYP)
.021REF (0.525)REF
.096(2.45) .085(2.15)
.014(0.35) .006(0.15)
.087(2.20) .079(2.00)
.018(0.46) .010(0.26)
C2 B1 E1
.043(1.10) .035(0.90)
8o 0o
.053(1.35) .045(1.15)
.006(0.15) .003(0.08)
.004(0.10) .000(0.00) .039(1.00) .035(0.90)
E2 B2 C1
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25OC unless otherwise specified)
NPN2222A ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO Ic=10μA,IE=0
75 V
Collector-emitter breakdown voltage Emitter-base breakdown voltage
V(BR)CEO Ic=10mA,IB=0 V(BR)EBO...