MMDT2227

Elektronische Bauelemente MMDT2227 NPN-PNP Silicon Multi-Chip Transistor RoHS Compliant Product * Features SOT-363 Power dissipation PCM : 0.2 W (Tamp.= 25 OC) Collector current ICM : 0.2/-0.2 A Collector-base voltage V(BR)CBO : 75/-60 V Operating & Storage junction Temperature Tj, Tstg : -55OC~ +150OC .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF .096(2.45) .085(2.15) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .018(0.46) .010(0.26) C2 B1 E1 .043(1.10) .035(0.90) 8o 0o .053(1.35) .045(1.15) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) E2 B2 C1 Dimensions in inches and (millimeters) Electrical Characteristics( Tamb=25OC unless otherwise specified) NPN2222A ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=10μA,IE=0 75 V Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CEO Ic=10mA,IB=0 V(BR)EBO...