Elektronische Bauelemente
MMDT2907A
PNP Silicon Multi-Chip Transistor
* Features
RoHS Compliant Product A suffix of "...
Elektronische Bauelemente
MMDT2907A
PNP Silicon Multi-Chip
Transistor
* Features
RoHS Compliant Product A suffix of "-C" specifies halogen-free
Power dissipation PCM : 0.15 W (Tamp.= 25OC)
Collector current ICM : -0.6 A
Collector-base voltage V(BR)CBO : -60 V
Operating & Storage junction Temperature Tj, Tstg : -55OC~ +150OC
C2 B1 E1
E2 B2 C1
Marking: K2F, 2F
SOT-363
.055(1.40) .047(1.20)
.026TYP (0.65TYP)
.021REF (0.525)REF
8o 0o
.096(2.45) .085(2.15)
.053(1.35) .045(1.15)
.014(0.35) .006(0.15) .087(2.20) .079(2.00)
.043(1.10) .035(0.90)
.018(0.46) .010(0.26)
.006(0.15) .003(0.08)
.004(0.10) .000(0.00)
.039(1.00) .035(0.90)
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25OC unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
T...
