MMDT5401

SMD Type PNP Transistors MMDT5401 (KMDT5401) Transistors ■ Features ● Epitaxial Planar Die Construction ● Ideal for Medium Power Amplification and Switching ● Dual Transistors (PNP+PNP) ● Complementary NPN Type Available(MMDT 5551) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature range ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Noise Figure Collector output capacitance Transition frequency ■ Marking Marking K4M Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating -160 -150 -5 -0.2 0.2 150 -55 to 150 Unit V A W ℃ Symbol Test Conditions VCBO Ic=...