Production specification
PNP General Purpose Transistor
FEATURES
Epitaxial planar die construction. Complementary ...
Production specification
PNP General Purpose
Transistor
FEATURES
Epitaxial planar die construction. Complementary
NPN type available
(MMST5551). Also available in lead free version.
Pb
Lead-free
MMST5401
APPLICATIONS
Ideal for medium power amplification and switching.
ORDERING INFORMATION
Type No.
Marking
MMST5401
K4M
SOT-323
Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter
Value
VCBO VCEO
collector-base voltage collector-emitter voltage
-160 -150
VEBO
emitter-base voltage
-5
IC collector current (DC)
-0.6
PC RθJA Tj ,Tstg
Collector dissipation Thermal resistance junction to ambient junction and storage temperature
0.2 625 -55 to +150
UNIT V V V A W °C/W °C
F055 Rev.A
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Production specification
PNP General Purpose
Transistor
MMST5401
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Parameter
Test conditions
MIN. MAX.
V(BR)CBO Collector-base breakdown v...