1.6for
2.8
NotNeRewcDoemsimgennsded 0.3Min.
NPN small signal transistor
MMSTA13
Features (1) High Current Gain.
Pa...
1.6for
2.8
NotNeRewcDoemsimgennsded 0.3Min.
NPN small signal
transistor
MMSTA13
Features (1) High Current Gain.
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
MMSTA13
Taping T146 3000
Dimensions (Unit : mm)
MMSTA13
2.9 0.4
(3)
1.1 0.8
(1)Emitter (2)Base (3)Collector
(2) (1) 0.95 0.95
1.9
0.15
Each lead has same dimensions Abbreviated symbol : R1M
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
VCBO VCES VEBO
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
Limits 30 30 10 0.3 0.2 0.35 150
−55 to 125
Unit
V V V A W
W∗
°C °C
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-emitter breakdown voltage BVCES 30
Collector-emitter breakdown voltage BVCEO 30
Emitter-base breakdown voltage
BVEBO 10
Collector-base cutoff...