ME25N10T

ME25N10T/ME25N10T-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME25N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION FEATURES ● RDS(ON)≦85mΩ@VGS=10V ● RDS(ON)≦105mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO-220) Top View * The Ordering Information: ME25N10T (Pb-free) ME25N10T-G (Green product-Halogen free ) Absolute Maximum Rati...