N- Channel 40V (D-S) MOSFET
ME200N04T / ME200N04T-G
GENERAL DESCRIPTION
The ME200N04T is the N-Channel logic enhanceme...
N- Channel 40V (D-S) MOSFET
ME200N04T / ME200N04T-G
GENERAL DESCRIPTION
The ME200N04T is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
(TO-220) Top View
FEATURES
● RDS(ON)≦3.5mΩ@VGS=10V ● RDS(ON)≦4.7mΩ@VGS=5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management ● DC/DC Converter ● Load Switch
e Ordering Information: ME200N04T (Pb-free)
ME200N04T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Symbol Maximum Ratings
Unit
Drain-Source Voltage
VDS 40
V
Gate-Source Voltage
VGS ±20
V
Continuous Drain Current*
TC=25℃ TC=70℃
ID
189 158
A
Pulsed Drain Current
IDM 755
A
Maximum Power Dissipation
TC=25℃ TC=70℃
...
