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ME50N08 Dataheets PDF



Part Number ME50N08
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME50N08 DatasheetME50N08 Datasheet (PDF)

N- Channel 80V (D-S) MOSFET GENERAL DESCRIPTION The ME50N08 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are need.

  ME50N08   ME50N08



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N- Channel 80V (D-S) MOSFET GENERAL DESCRIPTION The ME50N08 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-252-3L) Top View ME50N08 / ME50N08-G FEATURES ● RDS(ON)≦8.5mΩ@VGS=10V ● RDS(ON)≦12mΩ@VGS=6V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch * Th Ordering Information: ME50N08 (Pb-free) ME50N08-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Oth.


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