ME90N03

ME90N03/ME90N03-G N-Channel 30V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION The ME90N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION FEATURES ● RDS(ON)≦4.8mΩ@VGS=10V ● RDS(ON)≦9mΩ@VGS=4.5V ● ESD Protected ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Battery Powered System ● DC/DC Converter ● Load Switch (TO-252-3L) Top View e Ordering Information: ME90N03 (Pb-free) ME90N03-G (...