N-Channel MOSFET. ME100N03T Datasheet

ME100N03T MOSFET. Datasheet pdf. Equivalent

Part ME100N03T
Description N-Channel MOSFET
Feature ME100N03T /ME100N03T-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME100N03T-G is the N-Ch.
Manufacture Matsuki
Datasheet
Download ME100N03T Datasheet

ME100N03T /ME100N03T-G N- Channel 30V (D-S) MOSFET GENERAL ME100N03T Datasheet
ME100N03T /ME100N03T-G N- Channel 30V (D-S) MOSFET GENERAL ME100N03T-G Datasheet
Recommendation Recommendation Datasheet ME100N03T Datasheet




ME100N03T
ME100N03T /ME100N03T-G
N- Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
The ME100N03T-G is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell density,
DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance.
FEATURES
RDS(ON)3mΩ@VGS=10V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
DC/DC Converter
Load Switch
LCD Display inverter
PIN CONFIGURATION
(TO-220)
Top View
* The Ordering Information: ME100N03T /ME100N03T-G (Green product-Halogen free )
Absolute Maximum Ratings (Tc=25Unless Otherwise Noted)
Parameter
Symbol
Maximum Ratings
Unit
Drain-Source Voltage
VDS 30
V
Gate-Source Voltage
VGS ±20
V
Continuous Drain Current*
TC=25
TC=70
ID
172
144
A
Pulsed Drain Current
IDM 690
A
Maximum Power Dissipation*
TC=25
TC=70
PD
178
125
W
Operating Junction and Storage Temperature Range
Thermal Resistance-Junction to Case*
TJ, Tstg
RθJC
-55 to 175
0.84
D CC
/W
正式發行
*The device mounted on 1in2 FR4 board with 2 oz copper
* Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.
Aug, 2016-Ver1.2
01



ME100N03T
ME100N03T /ME100N03T-G
N- Channel 30V (D-S) MOSFET
Electrical Characteristics (TC =25Unless Otherwise Specified)
Symbol Parameter
STATIC
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
IDSS
RDS(ON)
Zero Gate Voltage Drain Current
Drain-Source On-State Resistancea
VSD Diode Forward Voltage
DYNAMIC
Limit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=24V, VGS=0V
VGS=10V, ID= 30A
IS=30A, VGS=0V
Min Typ Max Unit
30 V
1 2.5 V
±100 nA
1 μA
2.4 3 mΩ
1.2 V
Qg Total Gate Charge
135
Qgs
Qgd
Ciss
Gate-Source Charge
Gate-Drain Charge
Input capacitance
VDS=15V, VGS=10V, ID=15A
28.5
31.2
6292
nC
Coss
Crss
td(on)
tr
td(off)
tf
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS=15V, VGS=0V, F=1MHz
VDS=15V, RL =15Ω
VGEN=10V, RG=3.3Ω
831
711
32.8
19.7
108
26.7
pF
ns
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Aug, 2016-Ver1.2
DCC
正式發行
02





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