ME100N03T /ME100N03T-G
N- Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
The ME100N03T-G is the N-Channel logic enhancem...
ME100N03T /ME100N03T-G
N- Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
The ME100N03T-G is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
FEATURES
● RDS(ON)≦3mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
PIN CONFIGURATION
(TO-220) Top View
* The Ordering Information: ME100N03T /ME100N03T-G (Green product-Halogen free )
Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted)
Parameter
Symbol
Maximum Ratings
Unit
Drain-Source Voltage
VDS 30
V
Gate-Source Voltage
VGS ±20
V
Continuous Drain Current*
TC=25℃ TC=70℃
ID
172 144
A
Pulsed Drain Current
IDM 690
A
Maximum Power Dissipation*
TC=25℃ TC...
