ME4565AD4

ME4565AD4/ME4565AD4-G N- and P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME4565AD4 is the N and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-252-4L) Top View FEATURES RDS(ON) 30mΩ@VGS=10V (N-Ch) RDS(ON) 58mΩ@VGS=4.5V (N-Ch) RDS(ON) 45mΩ@VGS=-10V (P-Ch) RDS(ON) 75mΩ@VGS=-4.5V(P-Ch) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch LCD Displ...