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ME45N03T Dataheets PDF



Part Number ME45N03T
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME45N03T DatasheetME45N03T Datasheet (PDF)

30V N-Channel Enhancement Mode ME45N03T/ME45N03T-G GENERAL DESCRIPTION The ME45N03T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦14mΩ@VGS=10V ● RDS(ON)≦21mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power .

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30V N-Channel Enhancement Mode ME45N03T/ME45N03T-G GENERAL DESCRIPTION The ME45N03T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦14mΩ@VGS=10V ● RDS(ON)≦21mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (TO-220) Top View eOrdering Information: ME45N03T (Pb-free) ME45N03T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current(Tj=150℃) TC=25℃ TC=70℃ ID Pulsed Drain Current IDM Maximum Power Dissipation TC=25℃ TC=70℃ PD Opera.


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