N- and P-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4542D is the N- and P-Channel logic enhancement mode power ...
N- and P-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4542D is the N- and P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8) Top View
ME4542D/ME4542D-G
FEATURES
RDS(ON)
mΩ@VGS=10V (N-Ch)
RDS(ON) mΩ@VGS=4.5V (N-Ch)
RDS(ON) mΩ@VGS=-10V (P-Ch)
RDS(ON) mΩ@VGS=-4.5V (P-Ch)
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management DC/DC Converter LCD TV & Monitor Display inverter CCFL inverter LCD Display inverter
e Ordering In...
