P-Channel MOSFET. ME4544D Datasheet

ME4544D MOSFET. Datasheet pdf. Equivalent

Part ME4544D
Description N- & P-Channel MOSFET
Feature ME4544D/ME4544D-G N- and P-Channel 30-V (D-S) MOSFET , ESD Protection GENERAL DESCRIPTION The ME45.
Manufacture Matsuki
Datasheet
Download ME4544D Datasheet

ME4544D/ME4544D-G N- and P-Channel 30-V (D-S) MOSFET , ESD ME4544D Datasheet
ME4544D/ME4544D-G N- and P-Channel 30-V (D-S) MOSFET , ESD ME4544D-G Datasheet
Recommendation Recommendation Datasheet ME4544D Datasheet




ME4544D
ME4544D/ME4544D-G
N- and P-Channel 30-V (D-S) MOSFET , ESD Protection
GENERAL DESCRIPTION
The ME4544D is the N- and P-Channel logic enhancement mode
power field effect transistors are produced using high cell density ,
DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery
powered circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
FEATURES
RDS(ON)≦27m@VGS=10V (N-Ch)
RDS(ON)≦42m@VGS=4.5V (N-Ch)
RDS(ON)≦62m@VGS=-10V (P-Ch)
RDS(ON)≦83m@VGS=-4.5V (P-Ch)
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management
DC/DC Converter
LCD TV & Monitor Display inverter
CCFL inverter
LCD Display inverter
Top View
e Ordering Information: ME4544D (Pb-free)
ME4544D-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Operating Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient *
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDSS
VGSS
ID
IDM
PD
TJ, Tstg
RθJA
N-Channel
30
P-Channel
-30
±20 ±16
6.8 -4.5
5.4 -3.6
27 -18
22
1.28
1.28
-55 to 150
62.5
62.5
Unit
V
A
W
℃/W
DCC
正式發行
Dec, 2013-Ver1.0
01



ME4544D
ME4544D/ME4544D-G
N- and P-Channel 30-V (D-S) MOSFET , ESD Protection
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
STATIC
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
Conditions
VGS=0V, ID=250μA
VGS=0V, ID=-250μA
VDS=VGS, ID=250μA
VDS=VGS, ID=-250μA
Min Typ Max
N-Ch
P-Ch
N-Ch
P-Ch
30
-30
1.0
-1.0
3.0
-3.0
IGSS Gate Leakage Current
VDS=0V, VGS=±16V
VDS=0V, VGS=±12V
N-Ch
P-Ch
±10
±10
IDSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
VDS=-30V, VGS=0V
N-Ch
P-Ch
RDS(ON)
Drain-Source On-State Resistancea
VGS=10V, ID= 6.9A
VGS=-10V, ID= -6.1A
VGS=4.5V, ID= 5.8A
VGS=-4.5V, ID= -5.1A
N-Ch
P-Ch
N-Ch
P-Ch
21
48
34
65
VSD Diode Forward Voltage
IS=1.7A, VGS=0V
IS=-1.7A, VGS=0V
N-Ch
P-Ch
0.78
0.8
DYNAMIC
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
N-Channel
VDS=15V, VGS=10V, ID=6.9A
P-Channel
VDS=-15V, VGS=-10V, ID=-6.1A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
11
11.7
3.1
3.3
2.2
2
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Channel
VDS=15V, VGS=0V, f=1MHz
P-Channel
VDS=15V, VGS=0V, f=1MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
335
432
74
79
47
51
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
N-Channel
VDD=15V, RL =15Ω
ID=1A, VGEN=10V, RG=6Ω
N-Ch
P-Ch
N-Ch
P-Ch
9
34.6
17.6
18.9
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
P-Channel
VDD=-15V, RL =15Ω
ID=-1A, VGEN=-10V,RG=6Ω
N-Ch
P-Ch
N-Ch
P-Ch
22.9
40.9
3.3
5.5
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
1
-1
27
62
42
83
1.2
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Unit
V
V
μA
μA
mΩ
V
nC
pF
ns
DCC
正式發行
Dec, 2013-Ver1.0
02





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