Document
ME4544D/ME4544D-G
N- and P-Channel 30-V (D-S) MOSFET , ESD Protection
GENERAL DESCRIPTION
The ME4544D is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
FEATURES
● RDS(ON)≦27mΩ@VGS=10V (N-Ch)
● RDS(ON)≦42mΩ@VGS=4.5V (N-Ch)
● RDS(ON)≦62mΩ@VGS=-10V (P-Ch)
● RDS(ON)≦83mΩ@VGS=-4.5V (P-Ch)
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management ● DC/DC Converter ● LCD TV & Monitor Display invert.