P-Channel MOSFET. ME4548-G Datasheet

ME4548-G MOSFET. Datasheet pdf. Equivalent

Part ME4548-G
Description Dual N- & P-Channel MOSFET
Feature Dual N- and P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4548 is the dual N- and P-Channel .
Manufacture Matsuki
Datasheet
Download ME4548-G Datasheet

Dual N- and P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION ME4548-G Datasheet
Recommendation Recommendation Datasheet ME4548-G Datasheet




ME4548-G
Dual N- and P-Channel 30-V (D-S)
MOSFET
GENERAL DESCRIPTION
The ME4548 is the dual N- and P-Channel logic enhancement
mode power field effect transistors are produced using high cell
density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance. These devices
are particularly suited for low voltage application such as cellular
phone and notebook computer power management and other
battery powered circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface mount
package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4548/ME4548-G
FEATURES
RDS(ON) 18 mΩ@VGS=10V (N-Ch)
RDS(ON) 29 mΩ@VGS=4.5V(N-Ch)
RDS(ON) 20mΩ@VGS=-10V(P-Ch)
RDS(ON) 29 mΩ@VGS=-4.5V(P-Ch)
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switching
LCD Display inverter
* The Ordering Information: ME4548 (Pb-free)
ME4548-G (Green product-Halogen free)
(Green product)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation*
TA=25
TA=70
Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient*
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
The * *The device mounted on 1in2 FR4 board with 2 oz copper
N-Channel
P-Channel
Unit
Maximum Ratings Maximum Ratings
30 -30 V
±20 ±20 V
8.3 -7.3
6.6 -5.8
33 -29
22
1.28 1.28
-55 to 150
62.5
A
A
W
/W
DCC
正式發行
Jan,2015-Ver1.0
01



ME4548-G
ME4548/ME4548-G
Dual N- and P-Channel 30-V (D-S)
MOSFET
Electrical Characteristics (TJ =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VSD
DYNAMIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source on-State Resistancea
Diode Forward Voltage
VGS=0V, ID=250μA
VGS=0V, ID=-250μA
VDS=VGS, ID=250μA
VDS=VGS, ID=-250μA
VDS=0V, VGS=±20V
VDS=0V, VGS=±20V
VDS=24V, VGS=0V
VDS=-24V, VGS=0V
VGS=10V, ID=8.1A
VGS=-10V, ID= -7.1A
VGS=4.5V, ID=6A
VGS=-4.5V, ID=-5.6A
IS=1A, VGS=0V
IS=-1A, VGS=0V
N-Ch 30
P-Ch -30
V
N-Ch 1.0
P-Ch -1.0
2.5
-2.5
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
±100
±100
nA
1
-1
μA
15 18
17 20 mΩ
21 29
21 29
0.75 1
-0.7 -1
V
Qg
Qgs
Qgd
Ciss
Coss
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Channel
VDS=15V,VGS=10V,ID=8.1A
P-Channel
VDS=-15V,VGS=-10V,ID=-7.1A
N-Channel
VDS=15V, VGS=0V, f=1MHz
P-Channel
VDS=-15V,VGS=0V, f=1MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
16.6
31.7
3.8
5.6
3.4
6.3
502
892
81
188
59
133
nC
pF
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
N-Channel
VDD=25V, RL =25Ω
ID=1A, VGS=10V, RG=6Ω
P-Channel
VDD=-15V, RL =15Ω
ID=-1A, VGS=-10V, RG=6Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
11.1
43.4
9.8
21.1
32.9
92.6
4.5
20
ns
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
Jan,2015-Ver1.0
02





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