P-Channel MOSFET. ME4565A-G Datasheet

ME4565A-G MOSFET. Datasheet pdf. Equivalent

Part ME4565A-G
Description N- & P-Channel MOSFET
Feature N- and P-Channel 40-V (D-S) MOSFET ME4565A/ ME4565A-G GENERAL DESCRIPTION The ME4565A is the N and.
Manufacture Matsuki
Datasheet
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N- and P-Channel 40-V (D-S) MOSFET ME4565A/ ME4565A-G GENE ME4565A-G Datasheet
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ME4565A-G
N- and P-Channel 40-V (D-S) MOSFET
ME4565A/ ME4565A-G
GENERAL DESCRIPTION
The ME4565A is the N and P-Channel logic enhancement mode
power field effect transistors are produced using high cell density ,
DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery
powered circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
FEATURES
RDS(ON) 26.5m@VGS=10V (N-Ch)
RDS(ON) 45m@VGS=4.5V (N-Ch)
RDS(ON) 44m@VGS=-10V (P-Ch)
RDS(ON) 60m@VGS=-4.5V(P-Ch)
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
LCD Display inverter
e Ordering Information: ME4565A (Pb-free)
ME4565A-G (Green product-Halogen free )
Absolute Maximum Ratings (TA=25 Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25
Current(Tj=150 )*
TA=70
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
N-Channel P-Channel
40 -40
±20 ±20
6.9 -5.3
5.5 -4.3
27 -21
22
1.3 1.3
-55 to 150
62.5
62.5
Unit
V
V
A
A
W
*The device mounted on 1in2 FR4 board with 2 oz copper
DCC
正式發行
Apr, 2010-Ver1.0
01



ME4565A-G
N Channel 40-V (D-S) MOSFET
Electrical Characteristics (TA =25
ME4565A/ ME4565A-G
Unless Otherwise Specified)
Symbol Parameter
STATIC
Limit
Min Typ Max Unit
V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250 A
40
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250 A
1 3V
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
IDSS
Zero Gate Voltage Drain Current
VDS=40V, VGS=0V
±100
1
nA
A
RDS(ON)
Drain-Source On-State Resistancea
VGS=10V, ID=5.2A
VGS=4.5V, ID=4.9A
22 26.5
m
35 45
VSD Diode Forward Voltage
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
IS=6A, VGS=0V
VDS=20V, VGS=10V, ID=6A
VDS=20V, VGS=4.5V, ID=6A
0.86 1.2
V
15
7
nC
4.1
3.4
Ciss Input capacitance
565
Coss
Output Capacitance
VDS=15V, VGS=0V, F=1MHz
76 pF
Crss
Reverse Transfer Capacitance
24
Rg
td(on)
Gate Resistance
Turn-On Delay Time
VDS=0V, VGS=0V, f=1MHz
1
13
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDD=15V, RL =15
ID=1A, VGEN=10V, RG=6
14
36
tf Turn-On Fall Time
4
Notes: a. Pulse test: pulse width 300us, duty cycle 2%, Guaranteed by design, not subject to production testing.
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
ns
DCC
正式發行
Apr, 2010-Ver1.0
02





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