Monolithic SRAM. ACT-PS512K8 Datasheet

ACT-PS512K8 SRAM. Datasheet pdf. Equivalent

Part ACT-PS512K8
Description 4 Megabit Plastic Monolithic SRAM
Feature ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM BS I NC. Plastic Path™ Features s Low Pow.
Manufacture Aeroflex
Datasheet
Download ACT-PS512K8 Datasheet

ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM Pla ACT-PS512K8 Datasheet
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM BS ACT-PS512K8 Datasheet
Recommendation Recommendation Datasheet ACT-PS512K8 Datasheet




ACT-PS512K8
ACT-PS512K8 High Speed
4 Megabit Plastic Monolithic SRAM
Plastic Path™ Features
s Low Power Monolithic CMOS 512K x 8 SRAM
s Operating Temperature Range
q Full Military (-55°C to +125°C)
q Industrial (-40°C to +85°C)
s Burn-in and Temperature Cycle Available
s 10, 12, 15, 17, 20 & 25ns Access Times
s +5V Power Supply
s Industry Standard Pinouts
q Center Power / Ground Pins
s TTL Compatible I/O
s 3.3V Device I/O Interfacing
s JEDEC Standard 36 pin Plastic SOJ Package
q 36 Lead, .93" x .405" x 0.148 Small Outline J lead (SOJ),
Aeroflex code# "L2"
s Fully Static Operation
q No Clocks or Refresh Required
CIRCUIT TECHNOLOGY
www.aeroflex.com
FLEX LA
ISO
9001
CE R T I F I E D
Block Diagram – SOJ (L2)
WE
OE
A0 – A18
CE
Vss
512Kx8
Vcc
8
I/O0-7
Pin Description
I/O0-7
A0–18
WE
CE
OE
VCC
VSS
NC
Data I/O
Address Inputs
Write Enable
Chip Enable
Output Enable
Power Supply
Ground
Not Connected
General Description
The ACT-PS512K8 is a
Plastic High Speed, 4 Megabit
(4,194,304 bits) CMOS
Monolithic SRAM organized as
524,288 words by 8 bits.
Designed for high-speed, high
density, high reliablility, mass
memory and fast cache system
applications.
The plastic monolithic is
input and output TTL
compatible. Writing is executed
when the write enable (WE)
and chip enable (CE) inputs are
low. Reading is accomplished
when WE is high and CE and
output enable (OE) are both
low. Access time grades of
10ns 12ns, 15ns, 17ns, 20ns
and 25ns are standard.
eroflex Circuit Technology - Advanced Multichip Modules © SCD3764 REV A 6/2/98



ACT-PS512K8
Symbol
TC
TSTG
PD
VG
VCC
Absolute Maximum Ratings
Parameter
MINIMUM
Case Operating Temperature
-55
Storage Temperature
-65
Maximum Package Power Dissipation
Maximum Signal Voltage to Ground
-0.5
Power Supply Voltage
-0.5
MAXIMUM
+125
+150
1.0
VCC + 0.5
+7.0
Units
°C
°C
W
V
V
Symbol
VCC
VSS
VIH
VIL
TC
TC
Recommended Operating Conditions
Parameter
Power Supply Voltage
Minimum
+4.5
Ground
Input High Voltage
Input Low Voltage
0
+2.2
-0.5
Operating Temperature (Military)
-55
Operating Temperature (Industrial)
-40
Maximum
+5.5
0
VCC + 0.5
+0.8
+125
+85
Units
V
V
V
V
°C
°C
Mode
Standby
Output Disable
Read
Write
Truth Table
CE WE OE
HXX
L HH
LHL
LLX
Data I/O
High Z
High Z
Data OUT
Data IN
Supply
Current
ISB
ICC
ICC
ICC
Capacitance
(VIN & VOUT = 0V, f = 1MHz, TC = 25°C, unless otherwise noted, Guaranteed but not tested)
Symbol
Parameter
Maximum
CIN
COUT
Input Capacitance (A0-18, WE & OE)
Output Capacitance (I/O0-7 & CE)
6
8
Units
pF
pF
DC Characteristics
(VCC = 5.0V, VSS = 0V, TC = -55°C to +125°C or -40°C to +85°C)
Parameter
Sym
Conditions
Min
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
ILI VCC = Max, VIN = VSS to VCC
ILO CE = VIH, OE = VIH, VOUT = VSS to VCC
ICC CE = VIL, OE = VIH,f =5MHz,Vcc=5.5V
ISB CE = VIH, OE= VIH, f =5MHz,Vcc=5.5V
VOL IOL = 8 mA, Vcc = 4.5V
VOH IOH = -4 mA, Vcc = 4.5V
-10
-10
2.4
Note: DC Test conditions: VIL = 0.3V, VIH = Vcc - 0.3V.
Max
+10
+10
130
20
0.4
Units
µA
µA
mA
mA
V
V
Aeroflex Circuit Technology
2 SCD3764 REV A 6/2/98 Plainview NY (516) 694-6700





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