Multichip Module. ACT-F1M32 Datasheet

ACT-F1M32 Module. Datasheet pdf. Equivalent

Part ACT-F1M32
Description High Speed 32 Megabit Boot Block FLASH Multichip Module
Feature ACT–F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module Features CIRCUIT TECHNOLOGY www..
Manufacture Aeroflex
Datasheet
Download ACT-F1M32 Datasheet

ACT–F1M32 High Speed 32 Megabit Boot Block FLASH Multichip M ACT-F1M32 Datasheet
Recommendation Recommendation Datasheet ACT-F1M32 Datasheet




ACT-F1M32
ACT–F1M32 High Speed 32 Megabit
Boot Block
FLASH Multichip Module
Features
CIRCUIT TECHNOLOGY
www.aeroflex.com/act1.htm
s 4 Low Voltage/Power Intel 1M x 8 FLASH Die in One s Single Block Erase (All bits set to 1)
MCM Package
s Hardware Data Protection Feature
s Overall Configuration is 1M x 32
s Independent Boot Block Locking
s +5V Operation (Standard) or +3.3V (Consult Factory) s MIL-PRF-38534 Compliant MCMs Available
s Access Times of 80, 100 and 120 nS ( 5V VCC)
s Packaging – Hermetic Ceramic
s +5V or +12V Programing
q 68 Lead, .94" x .94" x .180" Dual-Cavity Small
s Erase/Program Cycles
q 100,000 Commercial
q 10,000 Military and Industrial
s Sector Architecture (Each Die)
Outline Gull Wing, Aeroflex code# "F14" (Drops into
the 68 Lead JEDEC .99"SQ CQFJ footprint)
s Internal Decoupling Capacitors for Low Noise
Operation
q One 16K Protected Boot Block (Bottom Boot Block s Commercial, Industrial and Military Temperature
Standard, Top Boot Block Special Order)
Ranges
q Two 8K Parameter Blocks
q One 96K Main Block
q Seven 128K Main Blocks
Block Diagram – CQFP(F14)
Standard Configuration
WP
WE
OE
A0 A19
RP
CE1
CE2
CE3
1Mx8
1Mx8
1Mx8
8
I/O0-7
88
I/O8-15 I/O16-23
Pin Description
I/O0-31
Data I/O
CE4 A0–19 Address Inputs
WE Write Enables
CE1-4 Chip Enables
OE Output Enable
1Mx8
WP Write Protect
RP Reset/Powerdown
VCC Power Supply
8
GND
Ground
I/O24-31 NC Not Connected
Block Diagram – CQFP(F14)
Optional Configuration
Pin Description
RP
OE
A0 A19
WE1
CE1 WE2 CE2 WE3
CE3 WE4 CE4 I/O0-31
A0–19
WE1-4
CE1-4
Data I/O
Address Inputs
Write Enable
Chip Enables
1Mx8
1Mx8
1Mx8
1Mx8
OE Output Enable
RP Reset/Powerdown
VCC Power Supply
8 88 8
GND
Ground
I/O0-7
I/O8-15 I/O16-23 I/O24-31 NC Not Connected
General Description
Utilizing Intel’s SmartVoltage
Boot Block Flash Memory
SmartDie™, the ACT–F1M32 is
a high speed, 32 megabit CMOS
flash multichip module (MCM)
designed for full temperature
range military, space, or high
reliability applications.
The ACT-F1M32 consists of
four high-performance Intel
X28F800BV 8 Mbit (8,388,608
bit) memory die. Each die
contains separately erasable
blocks, including a hardware
lockable boot block (16,384
bytes), two parameter blocks
(8,192 bytes each), and 8 main
blocks (one block of 98,304
bytes and seven blocks of
131,072 bytes) This defines the
boot block flash family
architecture.
The command register is
written by bringing WE to a logic
low level (VIL), while CE is low
and OE is high (VIH). Reading is
eroflex Circuit Technology - Advanced Multichip Modules © SCD1661B REV A 1/16/97



ACT-F1M32
General Description, Cont’d,
accomplished by chip Enable (CE) and
Output Enable (OE) being logically active.
Access time grades of 80nS, 100nS and
120nS maximum are standard.
The ACT–F1M32 is packaged in a
hermetically sealed co-fired ceramic 68
lead, .94" SQ Ceramic Gull Wing CQFP
package. This allows operation in a military
environment temperature range of -55°C to
+125°C.
The ACT–F1M32 provides program and
erase capability at 5V or 12V and allows
reads with Vcc at 5V or 3.3V(Not tested).
Since many designs read from flash
memory a large percentage of the time,
read operation using 3.3V can provide
great power savings. Consult the factory for
3.3V tested parts. In applications where
read performance is critical, faster access
times are obtainable with the 5V VCC part
detailed herein.
For program and erase operations, 5V
Vpp operation eliminates the need for in
system voltage converters. The 12V Vpp
operation provides reduced (approx 60%)
program and erase times where 12V is
available in the system. For design
simplicity, however, connect Vcc and Vpp
to the same 5V ±10% source.
Each block can be independently
erased and programmed 100,000 times at
commercial temperature or 10,000 times at
extended temperature.
The boot block is located at either the
bottom (Standard) or the top (Special
Order) of the address map in order to
accommodate different microprocessor
protocols for boot code location. Locking
and unlocking of the boot block is controlled
by WP and/or RP.
Intel's boot block architecture provides a
flexible solution for the different design
needs of various applications. The
asymmetrically-blocked memory map
allows the integration of several memory
components into a single flash device. The
boot block provides a secure boot PROM;
the parameter blocks can emulate
EEPROM functionality for parameter store
with proper software techniques; and the
main blocks provide code and data storage
with access times fast enough to execute
code in place, decreasing RAM
requirements.
For Detail Information regarding the
operation of the 28F800BV Memory die,
see the Intel datasheet (order number
290539-002).
SmartDie™ is a Trademark of Intel Corporation
Aeroflex Circuit Technology
2
SCD1661B REV A 1/16/97 Plainview NY (516) 694-6700





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