D-S MOSFET. ME55N06 Datasheet

ME55N06 MOSFET. Datasheet pdf. Equivalent

Part ME55N06
Description N-Channel 60-V (D-S) MOSFET
Feature N-Channel 60-V (D-S) MOSFET ME55N06/ ME55N06-G GENERAL DESCRIPTION The ME55N06 is the N-Channel lo.
Manufacture Matsuki
Datasheet
Download ME55N06 Datasheet

N-Channel 60-V (D-S) MOSFET ME55N06/ ME55N06-G GENERAL DES ME55N06 Datasheet
N-Channel 60-V (D-S) MOSFET ME55N06/ ME55N06-G GENERAL DES ME55N06-G Datasheet
N-Channel 75-V (D-S) MOSFET ME55N06A/ ME55N06A-G GENERAL D ME55N06A Datasheet
N-Channel 75-V (D-S) MOSFET ME55N06A/ ME55N06A-G GENERAL D ME55N06A-G Datasheet
Recommendation Recommendation Datasheet ME55N06 Datasheet




ME55N06
N-Channel 60-V (D-S) MOSFET
ME55N06/ ME55N06-G
GENERAL DESCRIPTION
The ME55N06 is the N-Channel logic enhancement mode power
field effect transistors, using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on state resistance. These devices are particularly suited
for low voltage application such as cellular phone, notebook
computer power management and other battery powered circuits,
and low in-line power loss that are needed in a very small outline
surface mount package.
FEATURES
RDS(ON)9.5m@VGS=10V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
DC/DC Converter
Load Switch
LCD Display inverter
PIN CONFIGURATION
(TO-252-3L)
Top View
e Ordering Information: ME55N06 (Pb-free)
ME55N06-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25
TC=70
Pulsed Drain Current
Maximum Power Dissipation
TC=25
TC=70
Operating Junction and Storage Temperature Range
Thermal Resistance-Junction to Case*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJC
Maximum Ratings
Unit
60 V
±25 V
64
A
51
256 A
63
W
40
-55 to 150
2
D CC
℃/W
正式發行
Mar, 2012–Ver1.1
01



ME55N06
ME55N06/ ME55N06-G
N-Channel 60-V (D-S) MOSFET
Electrical Characteristics (TC =25Unless Otherwise Specified)
Symbol
Parameter
Limit
Min Typ Max
STATIC
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
VSD
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Diode Forward Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=60V, VGS=0V
VGS=10V, ID=25A
IS=25A, VGS=0V
60
24
±100
1
7.5 9.5
0.85
1.2
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
VDS=44V, VGS=10V, ID=25A
114
23
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=44V, VGS=4.5V, ID=25A
31
43
Ciss Input Capacitance
5030
Coss
Output Capacitance
VDS=15V, VGS=0V, f=1MHz
597
Crss Reverse Transfer Capacitance
194
Rg Gate Resistance
VDS=0V, VGS=0V, f=1MHz
0.8
td(on)
Turn-On Delay Time
43
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDD=28V, RL=28Ω,
VGS =10V, RG=4.5Ω
25
105
tf Turn-Off Fall Time
30
Note: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Unit
V
V
nA
μA
mΩ
V
nC
pF
Ω
ns
Mar, 2012–Ver1.1
DCC
正式發行
02





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