D-S MOSFET. ME55N06A Datasheet

ME55N06A MOSFET. Datasheet pdf. Equivalent

Part ME55N06A
Description N-Channel 75-V (D-S) MOSFET
Feature N-Channel 75-V (D-S) MOSFET ME55N06A/ ME55N06A-G GENERAL DESCRIPTION The ME55N06A is the N-Channel.
Manufacture Matsuki
Datasheet
Download ME55N06A Datasheet

N-Channel 75-V (D-S) MOSFET ME55N06A/ ME55N06A-G GENERAL D ME55N06A Datasheet
N-Channel 75-V (D-S) MOSFET ME55N06A/ ME55N06A-G GENERAL D ME55N06A-G Datasheet
Recommendation Recommendation Datasheet ME55N06A Datasheet




ME55N06A
N-Channel 75-V (D-S) MOSFET
ME55N06A/ ME55N06A-G
GENERAL DESCRIPTION
The ME55N06A is the N-Channel logic enhancement mode power
field effect transistors, using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on state resistance. These devices are particularly suited
for low voltage application such as cellular phone, notebook
computer power management and other battery powered circuits,
and low in-line power loss that are needed in a very small outline
surface mount package.
FEATURES
RDS(ON)9.5mΩ@VGS=10V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
DC/DC Converter
Load Switch
LCD Display inverter
PIN CONFIGURATION
(TO-252-3L)
Top View
* The Ordering Information: ME55N06A (Pb-free)
ME55N06A-G (Green product-Halogen free)
(Green proGuct)
Absolute Maximum Ratings (TC=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25
TC=70
Pulsed Drain Current
Maximum Power Dissipation
TC=25
TC=70
Junction and Storage Temperature Range
Thermal Resistance-Junction to Case*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJC
Maximum Ratings
75
±25
64
51
256
63
40
-55 to 150
2
Unit
V
V
A
A
W
D CC
/W
正式發行
Jan, 2015Ver1.1
01



ME55N06A
ME55N06A/ ME55N06A-G
N-Channel 75-V (D-S) MOSFET
Electrical Characteristics (TJ =25Unless Otherwise Specified)
Symbol
Parameter
Limit
Min Typ Max
STATIC
BVDSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
75
2
4
IGSS Gate-Body Leakage
VDS=0V, VGS=±20V
±100
IDSS
Zero Gate Voltage Drain Current
VDS=75V, VGS=0V
1
RDS(ON)
Drain-Source On-Resistance
VGS=10V, ID=25A
7.5 9.5
VSD Diode Forward Voltage
IS=25A, VGS=0V
0.85 1.2
DYNAMIC
Qg Total Gate Charge
VDS=44V, VGS=10V, ID=25A
114
Qg Total Gate Charge
26
Qgs Gate-Source Charge
VDS=44V, VGS=4.5V, ID=25A
34
Qgd Gate-Drain Charge
33
Ciss Input Capacitance
1563
Coss
Output Capacitance
VDS=15V, VGS=0V, f=1MHz
363
Crss Reverse Transfer Capacitance
194
td(on)
Turn-On Delay Time
51.4
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDD=28V, RL=28Ω,
VGS =10V, RG=4.5Ω
19.3
104
tf Turn-Off Fall Time
19.9
Note: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Unit
V
V
nA
μA
mΩ
V
nC
pF
ns
Jan, 2015Ver1.1
DCC
正式發行
02





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