ME70N10T

N- Channel 100-V (D-S) MOSFET ME70N10T / ME70N10T-G GENERAL DESCRIPTION The ME70N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (TO-220) Top View FEATURES ● RDS(ON)≦17mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch * The Ordering Information: ME70N10T (Pb-free) ME70N10T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ Operating Junction and Storage Temperature Range Thermal Resistance-Junction to Case* * The device mounted on 1i...