N-Channel MOSFET. ME7688 Datasheet

ME7688 MOSFET. Datasheet pdf. Equivalent

Part ME7688
Description N-Channel MOSFET
Feature ME7688/ME7688-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7688 is the N-Chann.
Manufacture Matsuki
Datasheet
Download ME7688 Datasheet

ME7688/ME7688-G N-Channel 30V(D-S) Enhancement MOSFET GENER ME7688 Datasheet
ME7688/ME7688-G N-Channel 30V(D-S) Enhancement MOSFET GENER ME7688-G Datasheet
Recommendation Recommendation Datasheet ME7688 Datasheet




ME7688
ME7688/ME7688-G
N-Channel 30V(D-S) Enhancement MOSFET
GENERAL DESCRIPTION
The ME7688 is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as notebook computer power
management and other battery powered circuits where Low-side
switching , and low in-line power loss are needed in a very small
outline surface mount package.
PIN CONFIGURATION
PowerDFN 5x6
FEATURES
RDS(ON)11m@VGS=10V
RDS(ON)19.5m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
NB/MB Vcore Low side switching
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
e Ordering Information: ME7688 (Pb-free)
ME7688-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
TC=25
Continuous Drain*
TC=70
TA=25
TA=70
Pulsed Drain Current
TC=25
Maximum Power Dissipation*
TC=70
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJA
RθJC
Maximum Ratings
30
±20
46.4
37.1
12.6
10.1
50
37.9
24.2
2.8
1.8
-55 to 150
45
3.3
Unit
V
V
A
A
W
D℃℃C//WWC
正式發行
Feb, 2012-Ver1.1
01



ME7688
ME7688/ME7688-G
N-Channel 30V(D-S) Enhancement MOSFET
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol
STATIC
V(BR)DSS
VGS(th)
IGSS
IDSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-State Resistancea
VSD Diode Forward Voltage
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate-Resistance
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
Limit
Min Typ Max Unit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=30V, VGS=0V
VGS=10V, ID=15A
VGS=4.5V, ID=12A
IS=15A, VGS=0V
30 V
1 3V
±100 nA
1 μA
9 11
mΩ
15 19.5
0.9 1.2
V
VDS=15V, VGS=10V, ID=15A
18
9
nC
VDS=15V, VGS=4.5V, ID=15A
4.3
3.3
695
VDS=15V, VGS=0V, F=1MHz 151 pF
47
VDS=0V, VGS=0V, F=1MHz
VDD=15V, RL =15Ω
ID=1A, VGEN=10V
RG=6Ω
1.5 Ω
14
13
ns
42
7
Note: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Feb, 2012-Ver1.1
DCC
正式發行
02





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