N-Channel MOSFET. ME7646 Datasheet

ME7646 MOSFET. Datasheet pdf. Equivalent

Part ME7646
Description N-Channel MOSFET
Feature N-Channel 60V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7646-G is the N-Channel logic enhanc.
Manufacture Matsuki
Datasheet
Download ME7646 Datasheet

N-Channel 60V(D-S) Enhancement MOSFET GENERAL DESCRIPTION Th ME7646 Datasheet
N-Channel 60V(D-S) Enhancement MOSFET GENERAL DESCRIPTION Th ME7646-G Datasheet
Recommendation Recommendation Datasheet ME7646 Datasheet




ME7646
N-Channel 60V(D-S) Enhancement MOSFET
GENERAL DESCRIPTION
The ME7646-G is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density , DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as notebook computer power
management and other battery powered circuits where Low-side
switching , and low in-line power loss are needed in a very small
outline surface mount package.
PIN CONFIGURATION
PowerDFN 5x6
Top View
ME7646/ME7646-G
FEATURES
RDS(ON)8mΩ@VGS=10V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
UPS
Power Tools
LED Lighting
* The Ordering Information: ME7646/ME7646-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation*
TA=25
TA=70
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
Maximum Ratings
60
±25
14.73
11.79
59
2.78
1.78
-55 to 150
Thermal Resistance-Junction to Ambient*
RθJA
45
Unit
V
V
A
A
W
/W
*The device mounted on 1in2 FR4 board with 2 oz copper
DCC
正式發行
Aug, 2016-Ver1.2
01



ME7646
N-Channel 60V(D-S) Enhancement MOSFET
ME7646/ME7646-G
Electrical Characteristics (TJ =25Unless Otherwise Specified)
Symbol
STATIC
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-State Resistancea
Limit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±25V
VDS=60V, VGS=0V
VGS=10V, ID=30A
Min Typ Max Unit
60 V
2 4V
±100 nA
1 μA
6.5 8 mΩ
VSD Diode Forward Voltage
IS=15A, VGS=0V
0.8 1.3
V
DYNAMIC
Qg Total Gate Charge
111
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=30V, VGS=10V, ID=30A
37.7
34.8
nC
Ciss Input Capacitance
6043
Coss
Output Capacitance
VDS=30V, VGS=0V,F=1MHz
303 pF
Crss
td(on)
tr
td(off)
tf
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=30V, RL =30Ω
ID=1A, VGEN=10V
RG=6Ω
255
49
23.2
ns
112
29.9
Note: a.Pulse test: pulse width300us, duty cycle2
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Aug, 2016-Ver1.2
DCC
正式發行
02





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