N-Channel MOSFET. ME7644 Datasheet

ME7644 MOSFET. Datasheet pdf. Equivalent

Part ME7644
Description N-Channel MOSFET
Feature N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7644 is the N-Channel logic enhancem.
Manufacture Matsuki
Datasheet
Download ME7644 Datasheet

N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION Th ME7644 Datasheet
N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION Th ME7644-G Datasheet
Recommendation Recommendation Datasheet ME7644 Datasheet




ME7644
N-Channel 30V(D-S) Enhancement MOSFET
GENERAL DESCRIPTION
The ME7644 is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as notebook computer power
management and other battery powered circuits where Low-side
switching , and low in-line power loss are needed in a very small
outline surface mount package.
PIN CONFIGURATION
PowerDFN 5x6
Top View
ME7644/ME7644-G
FEATURES
RDS(ON)0.87mΩ@VGS=10V
RDS(ON)1.89mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
UPS
Power Tools
LED Lighting
* The Ordering Information: ME7644 (Pb-free)
ME7644-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation*
TA=25
TA=70
Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient*
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
*The device mounted on 1in2 FR4 board with 2 oz copper
Maximum Ratings
30
±20
45
36
179
2.78
1.78
-55 to 150
45
Unit
V
V
A
A
W
/W
DCC
正式發行
Mar, 2016-Ver1.1
01



ME7644
N-Channel 30V(D-S) Enhancement MOSFET
ME7644/ME7644-G
Electrical Characteristics (TJ =25Unless Otherwise Specified)
Symbol Parameter
STATIC
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IGSS Gate Leakage Current
IDSS
RDS(ON)
Zero Gate Voltage Drain Current
Drain-Source On-State Resistancea
Drain-Source On-State Resistancea
VSD Diode Forward Voltage
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Limit
Min Typ Max Unit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=24V, VGS=0V
VGS=10V, ID=30A
VGS=4.5V, ID=30A
IS=10A, VGS=0V
30 V
1.2 2.2 V
±100
1
nA
μA
0.72 0.87
mΩ
1.45 1.89
0.73 1.1
V
VDS=15V, VGS=10V, ID=30A
VDS=15V, VGS=4.5V, ID=30A
VDS=15V, VGS=0V,F=1MHz
VDD=15V, RL =15Ω
ID=1A, VGEN=4.5V
RG=3Ω
209
106
40.1
51.1
11727
1549
1457
79.6
75.5
141
68.6
nC
pF
ns
Note: a.Pulse test: pulse width300us, duty cycle2
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Mar, 2016-Ver1.1
DCC
正式發行
02





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