P-Channel MOSFET. ME7639 Datasheet

ME7639 MOSFET. Datasheet pdf. Equivalent

Part ME7639
Description P-Channel MOSFET
Feature P-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7639 is the P-Channel logic enhancem.
Manufacture Matsuki
Datasheet
Download ME7639 Datasheet

P-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION Th ME7639 Datasheet
P-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION Th ME7639-G Datasheet
Recommendation Recommendation Datasheet ME7639 Datasheet




ME7639
P-Channel 30V(D-S) Enhancement MOSFET
GENERAL DESCRIPTION
The ME7639 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as notebook computer power
management and other battery powered circuits where Low-side
switching , and low in-line power loss are needed in a very small
outline surface mount package.
PIN CONFIGURATION
PowerDFN 5x6
Top View
ME7639/ME7639-G
FEATURES
RDS(ON)11mΩ@VGS=-10V
RDS(ON)14mΩ@VGS=-6V
RDS(ON)18mΩ@VGS=-4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
* The Ordering Information: ME7639 (Pb-free)
ME7639-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient*
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
Maximum Ratings
-30
±25
-12.5
-10
-50
2.7
1.7
-55 to 150
45
*The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
/W
DCC
正式發行
July, 2014-Ver1.0
01



ME7639
P-Channel 30V(D-S) Enhancement MOSFET
ME7639/ME7639-G
Electrical Characteristics (TJ =25Unless Otherwise Specified)
Symbol
STATIC
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-State Resistancea
Limit
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VDS=0V, VGS=±25V
VDS=-24V, VGS=0V
VGS=-10V, ID= -15A
VGS=-6V, ID= -10A
Min Typ Max Unit
-30 V
-1.5 -2.5 V
±100 nA
-1 μA
7 11
9 14 mΩ
VGS=-4.5V, ID= -5A
11 18
VSD Diode Forward Voltage
IS=-1A, VGS=0V
-0.7 -1
V
DYNAMIC
Qg Total Gate Charge
53.8
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-15V, VGS=-10V, ID=-15A
11
12.6
nC
Ciss Input Capacitance
1224
Coss
Crss
td(on)
tr
td(off)
tf
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS=-15V, VGS=0V,F=1MHz
VDD=-15V, RL =15Ω
ID=-1A, VGEN=-10V
RG=6Ω
314 pF
242
44
19.3
158
ns
43.7
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
July, 2014-Ver1.0
DCC
正式發行
02





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)