N-Channel MOSFET. ME7636-G Datasheet

ME7636-G MOSFET. Datasheet pdf. Equivalent

Part ME7636-G
Description N-Channel MOSFET
Feature N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7636 is the N-Channel logic enhancem.
Manufacture Matsuki
Datasheet
Download ME7636-G Datasheet

N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION Th ME7636-G Datasheet
Recommendation Recommendation Datasheet ME7636-G Datasheet




ME7636-G
N-Channel 30V(D-S) Enhancement MOSFET
GENERAL DESCRIPTION
The ME7636 is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as notebook computer power
management and other battery powered circuits where Low-side
switching , and low in-line power loss are needed in a very small
outline surface mount package.
PIN CONFIGURATION
PowerDFN 5x6
ME7636/ME7636-G
FEATURES
RDS(ON) 2.5m@VGS=10V
RDS(ON) 3.3m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
NB/MB Vcore Low side switching
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
e Ordering Information: ME7636 (Pb-free)
ME7636-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25 Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
TC=25
Continuous Drain*
TC=70
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation*
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJA
RθJC
Maximum Ratings
30
±20
97
77
26
21
105
2.78
1.78
-55 to 150
Steady State
45
3.3
Unit
V
V
A
A
W
DCC
正式發行
Aug, 2012-Ver2.2
01



ME7636-G
ME7636/ME7636-G
N-Channel 30V(D-S) Enhancement MOSFET
Electrical Characteristics (TA =25 Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VSD
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-State Resistancea
Diode Forward Voltage
VGS=0V, ID=250 A
VDS=VGS, ID=250 A
VDS=0V, VGS=±20V
VDS=30V, VGS=0V
VGS=10V, ID=27A
VGS=4.5V, ID=20A
IS=2.8A, VGS=0V
30 V
1.3 3.0 V
±100 nA
1A
1.9 2.5
m
2.5 3.3
0.75 1.1
V
DYNAMIC
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate-Resistance
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
VDS=15V, VGS=4.5V, ID=27A
VDS=15V, VGS=0V,
F=1MHz
VDS=0V, VGS=0V, F=1MHz
VDD=15V, RL =15
ID=1A, VGEN=10V
RG=6
58
23
30
5930
660
220
0.85
36
23
170
44
nC
pF
Ns
Notes: a. Pulse test: pulse width 300us, duty cycle 2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Aug, 2012-Ver2.2
DCC
正式發行
02





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)