P-Channel MOSFET. ME7609D-G Datasheet

ME7609D-G MOSFET. Datasheet pdf. Equivalent

Part ME7609D-G
Description P-Channel MOSFET
Feature ME7609D/ME7609D-G P-Channel 30-V (D-S) MOSFET, ESD Producted GENERAL DESCRIPTION The ME7609D P-Chan.
Manufacture Matsuki
Datasheet
Download ME7609D-G Datasheet

ME7609D/ME7609D-G P-Channel 30-V (D-S) MOSFET, ESD Producted ME7609D-G Datasheet
Recommendation Recommendation Datasheet ME7609D-G Datasheet




ME7609D-G
ME7609D/ME7609D-G
P-Channel 30-V (D-S) MOSFET, ESD Producted
GENERAL DESCRIPTION
The ME7609D P-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
FEATURES
RDS(ON) 19.5m@VGS=-10V
RDS(ON) 40m@VGS=-4.5V
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
Load Switch
DSC
PIN CONFIGURATION
PowerDFN 5x6
e Ordering Information: ME7609D (Pb-free)
ME7609D-G (Green product-Halogen free)
Absolute Maximum Ratings (Tj=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
RθJC
Maximum
-30
±25
-9.4
-7.6
-38
2.8
1.8
-55 to 150
45
3.3
Unit
V
V
A
A
W
℃/W
℃/W
DCC
正式發行
Dec, 2010-Ver1.0
01



ME7609D-G
ME7609D/ME7609D-G
P-Channel 30-V (D-S) MOSFET, ESD Producted
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol
STATIC
Parameter
Limit
Min Typ Max Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250μA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250μA
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
IDSS
Zero Gate Voltage Drain Current
VDS=-30V, VGS=0V
RDS(ON)
Drain-Source On-State Resistance a
VGS=-10V, ID= -8.5A
VGS=-4.5V, ID= -6.3A
VSD Diode Forward Voltage
IS=-8.5A, VGS=0V
DYNAMIC
Qg Total Gate Charge
VDS=-15V,VGS=-10V, ID=-8.5A
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS=-15V,VGS=-4.5V, ID=-8.5A
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss
Output Capacitance
VDS=-15V, VGS=0V,f=1MHz
Crss Reverse Transfer Capacitance
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS=-15V, RL =15Ω
RGEN=6Ω, VGS=-10V
-30 V
-1 -3 V
±15 μA
-1 μA
15.5
30
19.5
40
mΩ
0.8 1.2
V
29
15
6
7.5
1130
214
71
40
16
76
18
nC
pF
ns
Note: a.Pulse test: pulse width300us, duty cycle2
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
Dec, 2010-Ver1.0
DCC
正式發行
02





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