P-Channel MOSFET. ME7607 Datasheet

ME7607 MOSFET. Datasheet pdf. Equivalent

Part ME7607
Description P-Channel MOSFET
Feature ME7607/ME7607-G P-Channel 35V Enhancement Mode MOSFET, ESD Protected GENERAL DESCRIPTION The ME7607.
Manufacture Matsuki
Datasheet
Download ME7607 Datasheet

ME7607/ME7607-G P-Channel 35V Enhancement Mode MOSFET, ESD P ME7607 Datasheet
ME7607/ME7607-G P-Channel 35V Enhancement Mode MOSFET, ESD P ME7607-G Datasheet
Recommendation Recommendation Datasheet ME7607 Datasheet




ME7607
ME7607/ME7607-G
P-Channel 35V Enhancement Mode MOSFET, ESD Protected
GENERAL DESCRIPTION
The ME7607 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
PIN CONFIGURATION
PowerDFN 5x6
Top View
FEATURES
RDS(ON)6mΩ@VGS=-10V
RDS(ON)9mΩ@VGS=-4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
LCD Display inverter
* The Ordering Information: ME7607(Pb-free)
ME7607-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation*
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
The * * The device mounted on 1in2 FR4 board with 2 oz copper
Limit
-35
±20
-17
-13.6
-68
2.8
1.8
-55 to 150
45
T
1.2
Nov, 2016-Ver1.0
Unit
V
V
A
W
/W
DCC
正式發行
01



ME7607
ME7607/ME7607-G
P-Channel 35V Enhancement Mode MOSFET, ESD Protected
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol
STATIC
VBR(DSS)
VGS(th)
IGSS
IDSS
Parameter
Drain-source breakdown voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-State Resistancea
VSD Diode Forward Voltage
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss
Input Capacitance
COSS
Crss
Output Capacitance
Reverse Transfer Capacitance
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Limit
Min Typ Max Unit
ID=-252μA , VGS=0V
VGS= VDS, ID=-250μA
VDS=0V, VGS=±16V
VDS=-35V, VGS=0V
VGS=-10V, ID= -20A
VGS=-4.5V, ID= -20A
IDR=-20A, VGS=0V
-35
-1
4
6
-0.8
V
-3 V
±10 μA
-1 μA
6
mΩ
9
-1.2 V
VDD=-24V, VGS=-10V, ID=-20A
VDD=-24V, VGS=-4.5V, ID=-20A
VDS=-15V, VGS=0V, f=-1MHZ
VDS=-24V, RL =1.2Ω
VGS=-10V,RG=6Ω
ID=-20A
118
59.8
23.3
32.7
5359
652
562
206
164
247
106
nC
pF
ns
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
1.2
Nov, 2016-Ver1.0
DCC
正式發行
02





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