N-Channel MOSFET. ME7692 Datasheet

ME7692 MOSFET. Datasheet pdf. Equivalent

Part ME7692
Description N-Channel MOSFET
Feature N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME7692 is the N-Channel logic enhancement mode po.
Manufacture Matsuki
Datasheet
Download ME7692 Datasheet

N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME7692 is ME7692 Datasheet
N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME7692 is ME7692-G Datasheet
Recommendation Recommendation Datasheet ME7692 Datasheet




ME7692
N-Channel 60V (D-S) MOSFET
GENERAL DESCRIPTION
The ME7692 is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance.
ME7692/ME7692-G
FEATURES
RDS(ON)6mΩ@VGS=10V
RDS(ON)8.1mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management
DC/DC Converter
PIN CONFIGURATION
PowerDFN 5x6
Top View
* TheOrdering Information: ME7692 (Pb-free)
ME4
ME7692-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Symbol
Maximum Ratings
Drain-Source Voltage
VDS 60
Gate-Source Voltage
Continuous Drain Current*
TA=25
TA=70
VGS
ID
±20
17
13.6
Pulsed Drain Current
IDM 68
Maximum Power Dissipation
TA=25
TA=70
PD
2.8
1.8
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 175
Thermal Resistance-Junction to Ambient*
RθJA
45
Unit
V
V
A
A
W
/W
Note 1 : Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.
D C CNote 2 : The device mounted on 1in2 FR4 board with 2 oz copper.
正式發行
MarM, 2a0r,1260-V10er1.V1ersion 1.0
01



ME7692
ME7692/ME7692-G
N-Channel 60V (D-S) MOSFET
Electrical Characteristics (TC =25Unless Otherwise Specified)
Symbol
Parameter
Limit
Min Typ Max Unit
STATIC
BVDSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
60
1
V
3V
IGSS Gate-Body Leakage
VDS=0V, VGS=±20V
IDSS
Zero Gate Voltage Drain Current
VDS=60V, VGS=0V
±100
1
nA
μA
RDS(ON)
Drain-Source On-Resistance*
VGS=10V, ID=25A
VGS=4.5V, ID=25A
5.0 6
mΩ
6.1 8.1
VSD Diode Forward Voltage*
IS=20A, VGS=0V
0.8 1.3 V
DYNAMIC
Qg Total Gate Charge
VDS=30V, VGS=10V, ID=30A
169
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS=30V, VGS=4.5V, ID=30A
78.5
35
nc
Qgd Gate-Drain Charge
38.5
Ciss Input Capacitance
8861
Coss
Output Capacitance
VDS=30V, VGS=0V, f=1MHz
325 pF
Crss
Reverse Transfer Capacitance
285
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS=30V, ID=1A,
VGS =10V, RG=6Ω,
RL=30Ω
46.1
33.6
204
55.7
Notes: a, pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b, Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
ns
MarM, 2a0r,1260-V10er1.V1ersion 1.0
DCC
正式發行
02





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