P-Channel MOSFET. ME85P03-G Datasheet

ME85P03-G MOSFET. Datasheet pdf. Equivalent

Part ME85P03-G
Description P-Channel MOSFET
Feature P- Channel 30V (D-S) MOSFET ME85P03/ ME85P03-G GENERAL DESCRIPTION The ME85P03 is the P-Channel lo.
Manufacture Matsuki
Datasheet
Download ME85P03-G Datasheet

P- Channel 30V (D-S) MOSFET ME85P03/ ME85P03-G GENERAL DES ME85P03-G Datasheet
Recommendation Recommendation Datasheet ME85P03-G Datasheet




ME85P03-G
P- Channel 30V (D-S) MOSFET
ME85P03/ ME85P03-G
GENERAL DESCRIPTION
The ME85P03 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where switching, and low in-line power loss are needed in a very
small outline surface mount package.
FEATURES
RDS(ON)8mΩ@VGS=-10V
RDS(ON)11mΩ@VGS=-4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
DC/DC Converter
Load Switch
LCD Display inverter
PIN CONFIGURATION
(TO-252)
Top View
* The Ordering Information: ME85P03 (Pb-free)
ME85P03-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
TC=25
TC=70
Pulsed Drain Current (Package limited)
Maximum Power Dissipation*
TC=25
TC=70
Operating Junction Temperature
Thermal Resistance-Junction to Case*
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJC
Maximum Ratings
-30
±20
-80
-65
-200
83
53
-55 to 150
1.5
*The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
DCC
正式發行
Dec, 2015-Ver1.2
01



ME85P03-G
P- Channel 30V (D-S) MOSFET
ME85P03/ ME85P03-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
STATIC
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
IDSS Zero Gate Voltage Drain Current
RDS(ON) Drain-Source On-State Resistancea
VSD Diode Forward Voltage
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Limit
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VDS=0V, VGS=±20V
VDS=-30V, VGS=0V
VGS=-10V, ID= -20A
VGS=-4.5V, ID= -20A
IS=-1A, VGS=0V
VDS=-15V, VGS=-10V, ID=-20A
Min Typ Max
-30
-1 -3
±100
-1
6.7 8
8.4 11
-0.7 -1.2
88
44
Qgs Gate-Source Charge
VDS=-15V, VGS=-4.5V, ID=-20A
12.5
Qgd Gate-Drain Charge
19.5
Ciss
Input capacitance
3887
Coss
Output Capacitance
VDS=-15V, VGS=0V, F=1MHz
432
Crss
Reverse Transfer Capacitance
372
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS=-15V, RL =15Ω
VGS=-10V, RG=6Ω
ID=-1A
48
20
170
54
Notes: a. Pulse test: pulse width300us, duty cycle2%,Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Unit
V
V
nA
μA
mΩ
V
nC
pF
ns
Dec, 2015-Ver1.2
DCC
正式發行
02





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