ME95N10F

N-Channel 100-V (D-S) MOSFET ME95N10F/ME95N10F-G GENERAL DESCRIPTION The ME95N10F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. FEATURES ● RDS(ON)≦8.5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability PIN CONFIGURATION (TO-220F) Top View * The Ordering Information: ME95N10F (Pb-free) ME95N10F-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current* TC=25℃ TC=70℃ VGS ID ±25 56.3 47.1 Pulsed Drain Current IDM 225 Maximum Power Dissipation TC=25℃ TC=70℃ PD 61.9 43.3 Junction and Storage Temperature Range TJ, Tstg -55 to 175 Thermal Resistance-Junction to Case** RθJC 2.42 ...