N-Channel MOSFET. ME95N10T-G Datasheet

ME95N10T-G MOSFET. Datasheet pdf. Equivalent

Part ME95N10T-G
Description N-Channel MOSFET
Feature N-Channel 100-V (D-S) MOSFET ME95N10T/ME95N10T-G GENERAL DESCRIPTION The ME95N10T is the N-Channel.
Manufacture Matsuki
Datasheet
Download ME95N10T-G Datasheet

N-Channel 100-V (D-S) MOSFET ME95N10T/ME95N10T-G GENERAL D ME95N10T-G Datasheet
Recommendation Recommendation Datasheet ME95N10T-G Datasheet




ME95N10T-G
N-Channel 100-V (D-S) MOSFET
ME95N10T/ME95N10T-G
GENERAL DESCRIPTION
The ME95N10T is the N-Channel logic enhancement mode power
field effect transistors, using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on state resistance.
FEATURES
RDS(ON)8.5mΩ@VGS=10V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
PIN CONFIGURATION
(TO-220)
Top View
* The Ordering Information: ME95N10T (Pb-free)
ME95N10T-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Symbol
Maximum Ratings
Drain-Source Voltage
VDS 100
Gate-Source Voltage
Continuous Drain Current*
TC=25
TC=70
VGS
ID
±25
124
104
Pulsed Drain Current
Maximum Power Dissipation
TC=25
TC=70
IDM
PD
496
300
210
Junction and Storage Temperature Range
TJ, Tstg
-55 to 175
Thermal Resistance-Junction to Case**
RθJC
0.5
Unit
V
V
A
A
W
/W
D C C* Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.
** The device mounted on 1in2 FR4 board with 2 oz copper.
正式發行
Aug,2015-Ver1.4
01



ME95N10T-G
N-Channel 100-V (D-S) MOSFET
ME95N10T/ME95N10T-G
Electrical Characteristics (TJ =25Unless Otherwise Specified)
Symbol
Parameter
Limit
STATIC
Min Typ Max Unit
BVDSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
100
2
V
4V
IGSS
IDSS
RDS(ON)
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance a
VDS=0V, VGS=±25V
VDS=100V, VGS=0V
VGS=10V, ID= 50A
±100 nA
1 μA
6.5 8.5 mΩ
VSD Diode Forward Voltage
IS=50A, VGS=0V
0.87 1.2
V
DYNAMIC
Qg Total Gate Charge
VDS=50V, VGS=10V, ID=75A
212
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS=50V, VGS=4.5V, ID=75A
57
nC
67
Qgd Gate-Drain Charge
50
Ciss Input Capacitance
12600
Coss
Output Capacitance
VDS=15V, VGS=0V, f=1MHz
868 pF
Crss Reverse Transfer Capacitance
285
td(on)
Turn-On Delay Time
209
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDS=50V, RL =5Ω,
VGS=10V, RG=25Ω
126
ns
588
tf Turn-Off Fall Time
158
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Aug,2015-Ver1.4
DCC
正式發行
02





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