N-Channel MOSFET. ME95N03 Datasheet

ME95N03 MOSFET. Datasheet pdf. Equivalent

Part ME95N03
Description N-Channel MOSFET
Feature N- Channel 30V (D-S) MOSFET ME95N03/ME95N03-G GENERAL DESCRIPTION The ME95N03 is the N-Channel log.
Manufacture Matsuki
Datasheet
Download ME95N03 Datasheet

N- Channel 30V (D-S) MOSFET ME95N03/ME95N03-G GENERAL DESC ME95N03 Datasheet
N- Channel 30V (D-S) MOSFET ME95N03/ME95N03-G GENERAL DESC ME95N03-G Datasheet
N-Channel 30V (D-S) MOSFET ME95N03T/ME95N03T-G GENERAL DES ME95N03T Datasheet
N-Channel 30V (D-S) MOSFET ME95N03T/ME95N03T-G GENERAL DES ME95N03T-G Datasheet
Recommendation Recommendation Datasheet ME95N03 Datasheet




ME95N03
N- Channel 30V (D-S) MOSFET
ME95N03/ME95N03-G
GENERAL DESCRIPTION
The ME95N03 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as LCD inverter, computer power
management and DC to DC converter circuits which need low in-line
power loss.
PIN CONFIGURATION
(TO-252-3L)
Top View
FEATURES
RDS(ON)3.2mΩ@VGS=10V
RDS(ON)4.2mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management
DC/DC Converter
LCD TV & Monitor Display inverter
CCFL inverter
Secondary Synchronous Rectification
* The Ordering Information: ME95N03 (Pb-free)
ME95N03-G (Green product-Halogen free)
Absolute Maximu(GmreRenaptriondgucst) (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
TC=25
TC=70
Pulsed Drain Current
Maximum Power Dissipation
TC=25
TC=70
Operating Junction Temperature
Thermal Resistance-Junction to Case**
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJC
Maximum Ratings
30
±20
100
80
400
54.4
34.8
-55 to 150
2.3
Unit
V
V
A
A
W
/W
* Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 70A.
** The device mounted on 1in2 FR4 board with 2 oz copper.
DCC
正式發行
Dec, 2015-Ver1.2
01



ME95N03
N- Channel 30V (D-S) MOSFET
ME95N03/ME95N03-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Conditions
STATIC
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
IDSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
RDS(ON)
Drain-Source On-State Resistancea
VGS=10V, ID= 20A
VGS=4.5V, ID= 20A
VSD Diode Forward Voltage
IS=1.0A, VGS=0V
DYNAMIC
Min Typ Max Unit
30 V
1 3V
±100
1
nA
μA
2.6 3.2
3.3 4.2
0.6 1.2 V
Qg Total Gate Charge
VDD=15V, VGS=10V, ID=20A
134
Qg Total Gate Charge
68
Qgs Gate-Source Charge
VDD=15V, VGS=4.5V, ID=20A
23
Qgd Gate-Drain Charge
33
Ciss
Input capacitance
6217
Coss
Output Capacitance
VDS=15V, VGS=0V, f=1MHz
855
Crss
Reverse Transfer Capacitance
304
td(on)
Turn-On Delay Time
36
tr
td(off)
tf
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS=15V, VGS=10V,
RG=3Ω, RL=15Ω
ID=1A
23
126
28
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
nC
pF
ns
Dec, 2015-Ver1.2
DCC
正式發行
02





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)