ME95N03-G

N- Channel 30V (D-S) MOSFET ME95N03/ME95N03-G GENERAL DESCRIPTION The ME95N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss. PIN CONFIGURATION (TO-252-3L) Top View FEATURES ● RDS(ON)≦3.2mΩ@VGS=10V ● RDS(ON)≦4.2mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● LCD TV & Monitor Display inverter ● CCFL inverter ● Secondary Synchronous Rectification * The Ordering Information: ME95N03 (Pb-free) ME95N03-G (Green product-Halogen free) Absolute Maximu(GmreRenaptriondgucst) (TA=25℃ Unless...