BD533

BD533/535/537 BD533/535/537 Medium Power Linear and Switching Applications Low Saturation Voltage Complement to BD534, BD536 and BD538 respectively 1 TO-220 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD533 : BD535 : BD537 : BD533 : BD535 : BD537 : BD533 : BD535 : BD537 1.Base Value 45 60 80 45 60 80 45 60 80 5 8 1 50 150 - 65 ~ 150 Units V V V V V V V V V V A A W °C °C VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO IC IB PC TJ TSTG Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current : BD533 : BD535 : BD537 Collector Cut-off Current : BD533 : BD535 : BD537 Emitter Cut-off Current * DC Current Gain : BD533/535 : BD537 : ALL DEVICE : BD533/535 : BD537 : ALL DEVICE : ALL DEVICE Test Condition VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE = 2V, IC = 500mA VCE = 2V, IC = 2A 20 15 40 25 15 30 15 40 20 0.8 1.5 3 12 75 100 0.8 V V V MHz Min. Typ. Max. 100 100 100 100 100 100 1 Units µA µA µA µA µA µA mA ICES IEBO hFE hFE hFE Groups J K VCE = 2V, IC = 2A VCE = 2V, IC = 3A VCE = 2V, IC = 2A VCE = 2V, IC = 3A IC = 2A, IB = 0.2A IC = 6A, IB = 0.6A VCE = 2...