ME80N08AH

80V N-Channel Enhancement Mode ME80N08AH/ME80N08AH-G GENERAL DESCRIPTION The ME80N08AH is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURES ● RDS(ON)≦5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO-263-2L) Top View The Ordering Information: ME80N08AH (Pb-free) ME80N08AH-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ±20 V Continuous Drain Current* Pulsed Drain Currenta Tc=25℃ TC=70℃ ID IDM 129 108 516 A A Power Dissipation TC=25℃ TC=70...