N-Channel MOSFET. ME80N08AH-G Datasheet

ME80N08AH-G MOSFET. Datasheet pdf. Equivalent

Part ME80N08AH-G
Description N-Channel MOSFET
Feature 80V N-Channel Enhancement Mode ME80N08AH/ME80N08AH-G GENERAL DESCRIPTION The ME80N08AH is the N-Ch.
Manufacture Matsuki
Datasheet
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ME80N08AH-G
80V N-Channel Enhancement Mode
ME80N08AH/ME80N08AH-G
GENERAL DESCRIPTION
The ME80N08AH is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance.
PIN CONFIGURATION
FEATURES
RDS(ON)5m@VGS=10V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
DC/DC Converter
Load Switch
LCD Display inverter
(TO-263-2L)
Top View
The Ordering Information: ME80N08AH (Pb-free)
ME80N08AH-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25Unless Otherwise Noted)
Parameter
Symbol Maximum Ratings
Unit
Drain-Source Voltage
VDS 80
V
Gate-Source Voltage
VGS ±20
V
Continuous Drain Current*
Pulsed Drain Currenta
Tc=25
TC=70
ID
IDM
129
108
516
A
A
Power Dissipation
TC=25
TC=70
PD
150
105
W
Junction and Storage Temperature Range
Thermal Resistance-Junction to Case**
TJ, Tstg
RθJC
-55 to 175
1
D/WC C
正式發行* Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.
** The device mounted on 1in2 FR4 board with 2 oz copper.
Nov, 2014 – Ver1.0
01



ME80N08AH-G
ME80N08AH/ME80N08AH-G
80V N-Channel Enhancement Mode
Electrical Characteristics (TJ =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max
STATIC
BVDSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
80
2.0
4.0
IGSS Gate-Body Leakage
VGS=±20V
±100
IDSS Zero Gate Voltage Drain Current
VDS=80V, VGS=0V
1
RDS(ON)
Drain-Source On-Resistance*
VGS=10V, ID=80A
3.9 5
VSD Diode Forward Voltage *
IS=40A, VGS=0V
0.8 1.2
DYNAMIC
Qg Total Gate Charge
VDD=40V, VGS=10V, ID=80A
217
Qg Total Gate Charge
60.3
Qgs Gate-Source Charge
VDD=40V, VGS=4.5V, ID=80A
65.4
Qgd Gate-Drain Charge
52.9
Ciss Input Capacitance
1788
Coss
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
592
Crss
Reverse Transfer Capacitance
2208
td(on)
tr
td(off)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VGS =10V, RL=20Ω
VDD=40V, RG=3.3Ω
51.5
36.3
197
tf Turn-Off Fall Time
56.6
Notes: a. pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
Unit
V
V
nA
μA
mΩ
V
nC
pF
ns
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Nov, 2014 – Ver1.0
DCC
正式發行
02





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