N-Channel MOSFET. ME80N75AF Datasheet

ME80N75AF MOSFET. Datasheet pdf. Equivalent

Part ME80N75AF
Description N-Channel MOSFET
Feature ME80N75AF / ME80N75AF-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION The ME80N75AF is the N-Cha.
Manufacture Matsuki
Datasheet
Download ME80N75AF Datasheet

ME80N75AF / ME80N75AF-G N- Channel 75-V (D-S) MOSFET GENERA ME80N75AF Datasheet
ME80N75AF / ME80N75AF-G N- Channel 75-V (D-S) MOSFET GENERA ME80N75AF-G Datasheet
Recommendation Recommendation Datasheet ME80N75AF Datasheet




ME80N75AF
ME80N75AF / ME80N75AF-G
N- Channel 75-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME80N75AF is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as notebook computer power
management and other battery powered circuits where Low-side
switching , and low in-line power loss are needed in a very small
outline surface mount package.
FEATURES
RDS(ON)10mΩ@VGS=10V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management
DC/DC Converter
Load Switch
PIN CONFIGURATION
(TO-220F)
Top View
* The Ordering Information: ME80N75AF (Pb-free)
ME80N75AF-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25
TC=70
Symbol
VDS
VGS
ID
Maximum Ratings
75
±25
55.7
46.6
Pulsed Drain Current
Maximum Power Dissipation
TC=25
TC=70
IDM
PD
223
61.9
43.4
Junction and Storage Temperature Range
TJ, Tstg
-55 to 175
Thermal Resistance-Junction to Case*
RθJC
2.42
* The device mounted on 1in2 FR4 board with 2 oz copper.
Jul, 2017-Ver1.4
Unit
V
V
A
A
W
/W
DCC
正式發行
01



ME80N75AF
ME80N75AF / ME80N75AF-G
N- Channel 75-V (D-S) MOSFET
Electrical Characteristics (TC =25Unless Otherwise Specified)
Symbol
Parameter
Limit
Min Typ Max Unit
STATIC
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
75
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250μA
2.0
4.0 V
IGSS Gate-Body Leakage
VDS=0V, VGS=±25V
±100 nA
IDSS Zero Gate Voltage Drain Current
VDS=75V, VGS=0V
1 μA
RDS(ON)
Drain-Source On-Resistance*
VGS=10V, ID=40A
8 10 mΩ
VSD Diode Forward Voltage *
IS=40A, VGS=0V
0.9 1.2 V
DYNAMIC
Qg Total Gate Charge
VDD=60V, VGS=10V, ID=75A
132
Qg Total Gate Charge
Qgs Gate-Source Charge
VDD=60V, VGS=4.5V, ID=75A
31
39.5
nC
Qgd Gate-Drain Charge
43.9
Ciss Input Capacitance
7440
Coss
Output Capacitance
VDS=20V, VGS=0V, f=1MHz
394
pF
Crss
Reverse Transfer Capacitance
337
td(on)
Turn-On Delay Time
60.6
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VGS =10V, RL=15Ω
VDS=30V, RG=10Ω
ID=2A
38.7
170
tf Turn-Off Fall Time
48
Notes: a. pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
ns
]
Jul, 2017-Ver1.4
DCC
正式發行
02





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