N-Channel MOSFET. ME80N75F-G Datasheet

ME80N75F-G MOSFET. Datasheet pdf. Equivalent

Part ME80N75F-G
Description N-Channel MOSFET
Feature N- Channel 75-V (D-S) MOSFET ME80N75F / ME80N75F-G GENERAL DESCRIPTION The ME80N75F is the N-Chann.
Manufacture Matsuki
Datasheet
Download ME80N75F-G Datasheet

N- Channel 75-V (D-S) MOSFET ME80N75F / ME80N75F-G GENERAL ME80N75F-G Datasheet
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ME80N75F-G
N- Channel 75-V (D-S) MOSFET
ME80N75F / ME80N75F-G
GENERAL DESCRIPTION
The ME80N75F is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance.
PIN CONFIGURATION
(TO-220F)
Top View
FEATURES
RDS(ON)10mΩ@VGS=10V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management
DC/DC Converter
Load Switch
* The Ordering Information: ME80N75F (Pb-free)
ME80N75F-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25
TC=70
Pulsed Drain Current
Single pulse Avalanche Current L=0.3mH
Single pulse Avalanche Energy L=0.3mH
Maximum Power Dissipation
TC=25
TC=70
TC=25
TC=70
TC=25
TC=70
Junction and Storage Temperature Range
Thermal Resistance-Junction to Case*
* The device mounted on 1in2 FR4 board with 2 oz copper.
Symbol
VDS
VGS
ID
IDM
Ias
Eas
PD
TJ
RθJC
Maximum Ratings
75
±25
55.7
46.6
223
40
33.5
240
168
61.9
43.4
-55 to 175
2.42
Jul, 2017-Ver1.5
Unit
V
V
A
A
A
Mj
W
/W
DCC
正式發行
01



ME80N75F-G
ME80N75F / ME80N75F-G
N- Channel 75-V (D-S) MOSFET
Electrical Characteristics (TC =25Unless Otherwise Specified)
Symbol
Parameter
Limit
Min Typ Max Unit
STATIC
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
75
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250μA
2.0
4.0 V
IGSS Gate-Body Leakage
VDS=0V, VGS=±25V
±100 nA
IDSS
RDS(ON)
Zero Gate Voltage Drain Current
Drain-Source On-Resistance*
VDS=75V, VGS=0V
VGS=10V, ID=40A
1 μA
8 10 mΩ
VSD Diode Forward Voltage *
IS=40A, VGS=0V
0.9 1.2
V
DYNAMIC
Qg Total Gate Charge
VDD=60V, VGS=10V, ID=75A
137
Qg Total Gate Charge
Qgs Gate-Source Charge
VDD=60V, VGS=4.5V, ID=75A
27.9
36.2
nC
Qgd Gate-Drain Charge
52.1
Rg Gate Resistance
Ciss Input Capacitance
VDS=0V, VGS=0V, f=1MHz
1
6160
Ω
Coss
Output Capacitance
VDS=20V, VGS=0V, f=1MHz
435
pF
Crss
Reverse Transfer Capacitance
146
td(on)
Turn-On Delay Time
63.6
tr Turn-On Rise Time
VGS =10V, RL=15Ω
40.8
td(off)
Turn-Off Delay Time
VDD=30V, RG=10Ω
167
tf Turn-Off Fall Time
47.7
Notes: a. pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
ns
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Jul, 2017-Ver1.5
DCC
正式發行
02





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