N-Channel MOSFET. ME80N08AF-G Datasheet

ME80N08AF-G MOSFET. Datasheet pdf. Equivalent

Part ME80N08AF-G
Description N-Channel MOSFET
Feature N-Channel 80V (D-S) MOSFET ME80N08AF/ME80N08AF-G GENERAL DESCRIPTION The ME80N08AF is the N-Channe.
Manufacture Matsuki
Datasheet
Download ME80N08AF-G Datasheet

N-Channel 80V (D-S) MOSFET ME80N08AF/ME80N08AF-G GENERAL D ME80N08AF-G Datasheet
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ME80N08AF-G
N-Channel 80V (D-S) MOSFET
ME80N08AF/ME80N08AF-G
GENERAL DESCRIPTION
The ME80N08AF is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance.
FEATURES
RDS(ON)5mΩ@VGS=10V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
DC/DC Converter
Load Switch
LCD Display inverter
PIN CONFIGURATION
(TO-220F)
Top View
* The Ordering Information: ME80N08A F(Pb-free)
ME80N08AF-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25Unless Otherwise Noted)
Parameter
Symbol Maximum Ratings
Unit
Drain-Source Voltage
VDS 80
V
Gate-Source Voltage
Continuous Drain Current*
Pulsed Drain Currenta
Power Dissipation
Tc=25
TC=70
TC=25
TC=70
VGS
ID
IDM
PD
±20
81
68
326
66
46
V
A
A
W
Junction and Storage Temperature Range
TJ, Tstg
-55 to 175
Thermal Resistance-Junction to Case**
RθJC
2.25
/W
* Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.
** The device mounted on 1in2 FR4 board with 2 oz copper.
DCC
Jul, 2017-Ver1.1
正式發行
01



ME80N08AF-G
ME80N08AF/ME80N08AF-G
N-Channel 80V (D-S) MOSFET
Electrical Characteristics (TJ =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max
STATIC
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
80
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250μA
2.0
4.0
IGSS Gate-Body Leakage
VGS=±20V
±100
IDSS Zero Gate Voltage Drain Current
VDS=80V, VGS=0V
1
RDS(ON)
Drain-Source On-Resistance*
VGS=10V, ID=80A
3.9 5
VSD Diode Forward Voltage *
IS=40A, VGS=0V
0.8 1.2
DYNAMIC
Qg Total Gate Charge
225
Qgs Gate-Source Charge
VDD=40V, VGS=10V, ID=80A
59
Qgd Gate-Drain Charge
54
Ciss Input Capacitance
12500
Coss
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
1150
Crss
Reverse Transfer Capacitance
375
td(on)
tr
td(off)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VGS =10V, RL=20Ω
VDD=40V, RG=3.3Ω
50.5
31.7
199
tf Turn-Off Fall Time
51.4
Notes: a. pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
Unit
V
V
nA
μA
mΩ
V
nC
pF
ns
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Jul, 2017-Ver1.1
DCC
正式發行
02





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