ME80N75AT / ME80N75AT-G
N- Channel 75-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME80N75AT is the N-Channel logic enhanceme...
ME80N75AT / ME80N75AT-G
N- Channel 75-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME80N75AT is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦10.5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
APPLICATIONS
● Power Management ● DC/DC Converter ● Load Switch
(TO-220) Top View
e Ordering Information: ME80N75AT (Pb-free)
ME80N75AT-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Symbol Maximum Rating
Unit
Drain-Source Voltage
VDS 75
V
Gate-Source Voltage
VGS ±25
V
Continuous Drain Current*
TC=25℃ TC=70℃
ID
93 78
A
Pulsed Drain Current
IDM 372
A
Maximum Power Dissipation
TC=25℃ TC=70℃
PD
200 140
W
Operating Junc...