N-Channel MOSFET. ME80N75T Datasheet

ME80N75T MOSFET. Datasheet pdf. Equivalent

Part ME80N75T
Description N-Channel MOSFET
Feature N- Channel 75-V (D-S) MOSFET ME80N75T / ME80N75T-G GENERAL DESCRIPTION The ME80N75T is the N-Chann.
Manufacture Matsuki
Datasheet
Download ME80N75T Datasheet

N- Channel 75-V (D-S) MOSFET ME80N75T / ME80N75T-G GENERAL ME80N75T Datasheet
N- Channel 75-V (D-S) MOSFET ME80N75T / ME80N75T-G GENERAL ME80N75T-G Datasheet
Recommendation Recommendation Datasheet ME80N75T Datasheet




ME80N75T
N- Channel 75-V (D-S) MOSFET
ME80N75T / ME80N75T-G
GENERAL DESCRIPTION
The ME80N75T is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance.
PIN CONFIGURATION
(TO-220)
Top View
FEATURES
RDS(ON)10m@VGS=10V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management
DC/DC Converter
Load Switch
e Ordering Information: ME80N75T (Pb-free)
ME80N75T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDSS
75
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current*
TC=25
TC=70
ID
93
78
A
Pulsed Drain Current
IDM 372
A
Maximum Power Dissipation
TC=25
TC=70
PD
200
140
W
Operating Junction and Storage Temperature Range
TJ
-55 to 175
Thermal Resistance-Junction to Case**
RθJC
0.75
* Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.
** The device mounted on 1in2 FR4 board with 2 oz copper.
℃/W
DCC
正式發行
May, 2012-Ver1.1
01



ME80N75T
N- Channel 75-V (D-S) MOSFET
ME80N75T / ME80N75T-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol
Parameter
Limit
Min Typ Max Unit
STATIC
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
VSD
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance*
Diode Forward Voltage *
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±25V
VDS=75V, VGS=0V
VGS=10V, ID=40A
IS=40A, VGS=0V
75 V
2.0 4.0 V
±100 nA
1 μA
8 10 mΩ
0.9 1.2
V
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=60V, VGS=10V, ID=75A
VDD=60V, VGS=4.5V, ID=75A
134
27
36
50
nC
Rg Gate Resistance
Ciss Input Capacitance
VDS=0V, VGS=0V, f=1MHz
0.8
6200
Ω
Coss
Output Capacitance
VDS=20V, VGS=0V, f=1MHz
437
Crss Reverse Transfer Capacitance
144
td(on)
Turn-On Delay Time
60
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VGS =10V, RL=15Ω
VDD=30V, RG=10Ω
43
159
tf Turn-Off Fall Time
47
Notes: a. pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
pF
ns
DCC
正式發行
May, 2012-Ver1.1
02





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